| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOT-1220 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0165 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.7 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 7.2A |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 12.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Size-Length | 2.1 mm |
| Size-Width | 2.1 mm |
| Size-Height | 0.65 mm |
The PMPB20EN is a N-channel enhancement-mode FET in a leadless medium power surface-mount plastic package using Trench MOSFET technology. It is suitable for use in charging switch for portable devices, DC-to-DC converters and hard disk and computing power management applications.
● Very fast switching
● Small and leadless ultra thin SMD plastic package
● Exposed drain pad for excellent thermal conduction
● Tin-plated 100% solderable side pads for optical solder inspection
● -55 to 150°C Junction temperature range
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