TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-416-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.4 Ω |
Polarity | N-Channel |
Power Dissipation | 530 mW |
Threshold Voltage | 700 mV |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 800 mA |
Input Capacitance (Ciss) | 43pF @25V(Vds) |
Input Power (Max) | 530 mW |
Operating Temperature (Max) | 150 ℃ |
Power Dissipation (Max) | 530mW (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Size-Width | 0.9 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMR400UN,115 is a N-channel enhancement-mode FET in ultra-small surface-mount plastic package using TrenchMOS® technology. It is suitable for use in driver circuits and switching in portable appliances.
● Low threshold voltage
● Low ON-state resistance
● Footprint 63% smaller than SOT23
● -55 to 150°C Junction temperature range
NXP
Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Nexperia
Trans MOSFET N-CH 30V 0.8A 3Pin SC-75 T/R
Nexperia
Trans MOSFET N-CH 30V 0.8A 3Pin SC-75
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.