| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.016 Ω |
| Power Dissipation | 1.2 W |
| Threshold Voltage | 400 mV |
| Input Capacitance | 1240 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 24 ns |
| Input Capacitance (Ciss) | 1240pF @10V(Vds) |
| Input Power (Max) | 510 mW |
| Fall Time | 36 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 510mW (Ta), 6.94W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMV16XN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications.
● Low threshold voltage
● Very fast switching
● Enhanced power dissipation capability of 1200mW
● -55 to 150°C Junction temperature range
Nexperia
16 Pages / 0.7 MByte
Nexperia
15 Pages / 0.25 MByte
Nexperia
MOSFET P-CH 20V 1.2A TO-236AB
Nexperia
PMV164ENEA/SOT23/TO-236AB
NXP
Trans MOSFET N-CH 20V 8.6A 3Pin SOT-23 T/R
Nexperia
Transistor: P-MOSFET; unipolar; -20V; -0.8A; 480mW; SOT23
Nexperia
PMV160UP - 20V, 1.2A P-channel Trench MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
