| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.019 Ω |
| Power Dissipation | 1.2 W |
| Threshold Voltage | 400 mV |
| Input Capacitance | 1150 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 1150pF @15V(Vds) |
| Input Power (Max) | 510 mW |
| Fall Time | 32 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 510mW (Ta), 6.94W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMV20XNE is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
● Low threshold voltage
● Enhanced power dissipation capability of 1200mW
● 2kV HBM ESD protection
● -55 to 150°C Junction temperature range
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