| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.25 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 1.90 A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
The PMV213SN is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. It is suitable for use in DC-to-DC convertors switching applications.
● Low conduction losses due to low ON-state resistance
● -55 to 150°C Junction temperature range
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