TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.25 Ω |
Power Dissipation | 2 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 100 V |
Rise Time | 5 ns |
Input Capacitance (Ciss) | 330pF @20V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 3 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 280 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.4 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMV213SN is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. It is suitable for use in DC-to-DC convertors switching applications.
● Low conduction losses due to low ON-state resistance
● -55 to 150°C Junction temperature range
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