| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.036 Ω |
| Polarity | N-Channel |
| Power Dissipation | 490 mW |
| Threshold Voltage | 650 mV |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 4.4A |
| Rise Time | 12 ns |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Operating Temperature | -55℃ ~ 150℃ |
The PMV40UN2 is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications.
● Low threshold voltage
● Very fast switching
● Enhanced power dissipation capability of 1000mW
● -55 to 150°C Junction temperature range
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