| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.035 Ω |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
The PMV45EN is a N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed for high-speed switching and battery management.
● Logic-level compatible
● Very fast switching
Nexperia
12 Pages / 0.07 MByte
Nexperia
48 Pages / 5.11 MByte
NXP
Trans MOSFET N-CH 30V 5.4A 3Pin TO-236AB T/R
Nexperia
Trans MOSFET N-CH 30V 5.1A 3Pin TO-236AB T/R
Nexperia
Trans MOSFET N-CH 30V 5.4A 3Pin TO-236AB T/R
Nexperia
Trans MOSFET N-CH 30V 5.4A 3Pin TO-236AB
Philips
mTrenchMOSTM enhanced logic level FET
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