TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | XDFN-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.034 Ω |
Power Dissipation | 400 mW |
Threshold Voltage | 650 mV |
Input Capacitance | 556 pF |
Drain to Source Voltage (Vds) | 12 V |
Rise Time | 21 ns |
Input Capacitance (Ciss) | 556pF @10V(Vds) |
Fall Time | 9 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 400mW (Ta), 8.33W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMXB40UNE is a N-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in high-side load switch and charging switch for portable devices, power management in battery driven portables, LED driver and DC-to-DC converter applications.
● Leadless ultra small and ultra thin SMD plastic package
● Exposed drain pad for excellent thermal conduction
● 1.5kV ESD protection HBM
● 34mR Very low Drain-Source ON-state resistance RDS (ON)
● Very low threshold voltage of 0.65V for portable applications
● -55 to 150°C Junction temperature range
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