TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 300 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Power Dissipation | 0.625 W |
Breakdown Voltage (Collector to Emitter) | 30 V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Material | Silicon |
Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 30V 600mA 300MHz 625mW Through Hole TO-92-3
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