| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Power Dissipation | 0.625 W |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| hFE Min | 100 |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 30V 600mA 300MHz 625mW Through Hole TO-92-3
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