TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 200 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Power Dissipation | 0.625 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 100 @150mA, 10V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 60V 800mA 200MHz 625mW Through Hole TO-92-3
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