| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363-6 |
| Power Dissipation | 0.3 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| hFE Min | 100 @5mA, 5V |
| Input Power (Max) | 300 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The PUMH9 is a dual NPN Resistor Equipped Transistor Array in a surface-mount plastic package. This bipolar device is suitable for low current peripheral driver, control of IC inputs and replaces general-purpose transistors in digital applications.
● Built-in bias resistors
● Simplifies circuit design
● Reduces component count
● PUMB9 dual PNP complement
● PUMD9 NPN-PNP complement
Nexperia
19 Pages / 0.76 MByte
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206 Pages / 0.21 MByte
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