| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 300 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 600 mA |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 1.5 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Thermal Resistance | 83.3℃/W (RθJC) |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 1.5 W |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.57 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The PZT2222AT1G is an NPN Silicon Planar Epitaxial Transistor designed for use in linear and switching and medium power surface mount applications. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. This transistor is PPAP capable and AEC-Q101 qualified. The SOT-223 package ensures level mounting, resulting in improved thermal conduction and allows visual inspection of soldered joints.
● Halogen-free
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