| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 |
| hFE Max | 300 |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 1000 |
PNP Silicon Epitaxial transistor i This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • Complement to PZT2222AT1 • The SOT-223 package can be soldered using wave or reflow
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