| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -600 mA |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 1.5 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 10V |
| hFE Max | 300 |
| Input Power (Max) | 1.5 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.57 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The PZT2907AT1G is a bipolar PNP Transistor designed for use as a general purpose amplifier and in switching applications. The device is housed in the package which is designed for medium power surface-mount applications. The package ensures level mounting, resulting in improved thermal conduction and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
● Can be soldered using wave or reflow
● AEC-Q101 qualified and PPAP capable
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