TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 2 Pin |
Supply Voltage (DC) | 1.50 V |
Operating Voltage | 1.5 V |
Case/Package | Side Looker |
Power Rating | 100 mW |
Forward Voltage | 1.5 V |
Wavelength | 940 nm |
Viewing Angle | 50° |
Peak Wavelength | 945 nm |
Power Dissipation | 100 W |
Rise Time | 800 ns |
Test Current | 100 mA |
Forward Current | 100 mA |
Maximum Forward Voltage (Max) | 1.5 V |
Forward Current (Max) | 50 mA |
Fall Time | 800 ns |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 4.44 mm |
Size-Height | 5.08 mm |
Operating Temperature | -40℃ ~ 100℃ |
The QEE113 is a 940nm GaAs Infrared LED is suitable for QSE113 photosensor. It has 50° medium wide emission angle and grey stripe on the top side. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
● GaAs chip material
● High output power
Fairchild
5 Pages / 0.16 MByte
Fairchild
7 Pages / 0.28 MByte
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1 Pages / 0.18 MByte
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