| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-153 |
| Drain to Source Resistance (on) (Rds) | 0.26 Ω |
| Polarity | Dual N |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Minimum Packing Quantity | 3000 |
2.5V Drive Nch+Nch MOS FET Features Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package (TSMT6). Application Power switching, DC / DC converter.
ROHM Semiconductor
4 Pages / 0.06 MByte
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