TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 1.00 A |
Case/Package | TSOT-23-6 |
Number of Channels | 2 Channel |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.364 Ω |
Polarity | Dual N-Channel |
Power Dissipation | 900 mW |
Threshold Voltage | 1.5 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 1.00 A |
Rise Time | 7 ns |
Input Capacitance (Ciss) | 77pF @10V(Vds) |
Input Power (Max) | 1.25 W |
Fall Time | 6 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1250 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.9 mm |
Size-Width | 1.6 mm |
Size-Height | 0.95 mm |
Operating Temperature | 150℃ (TJ) |
The QS6K1TR is a dual N-channel Complex MOSFET designed as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. It is designed for coin processing machines, portable data terminal, handy and bench type digital multi-meter, PLC, DVR/DVS, POS, electric bike, smart meter, surveillance camera, X-ray inspection machine for security, surveillance camera for network, intercom/baby monitor, fingerprint authentication device, machine vision camera for industrial and display for EMS applications.
● Low ON-resistance
● Small and surface-mount package
● Built-in G-S protection diode
● Fast switching performance
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