TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 2 Pin |
Case/Package | T-3 |
Number of Channels | 1 Channel |
Number of Positions | 2 Position |
Wavelength | 940 nm |
Viewing Angle | 24° |
Peak Wavelength | 940 nm |
Power Dissipation | 0.075 W |
Rise Time | 15 µs |
Breakdown Voltage (Collector to Emitter) | 30 V |
Input Power (Max) | 75 mW |
Fall Time | 15 µs |
Fall Time (Max) | 15000 ns |
Fall Time (Max) | 15000 ns |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 75 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.7 mm |
Size-Width | 2.2 mm |
Size-Height | 3 mm |
Operating Temperature | -40℃ ~ 85℃ (TA) |
The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package.
●Features
●---
● |
● NPN silicon phototransistor
● T-3/4 (2 mm) surface mount package
● Medium wide beam angle 24°
● Black plastic package
● Matched emitters: QEB363 or QEB373
● Daylight filter
● Tape & Reel option (See tape & Reel specifications)
● Lead form options: Gullwing, Yoke, Z-Bend
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