| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Supply Voltage (DC) | 5.00 V |
| Voltage Rating (DC) | 30.0 V |
| Operating Voltage | 5.00 V |
| Case/Package | Side Looking |
| Output Voltage | ≤30.0 V |
| Breakdown Voltage | 30.0 V |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Wavelength | 880 nm |
| Viewing Angle | 25° |
| Peak Wavelength | 880 nm |
| Polarity | NPN |
| Power Dissipation | 100 mW |
| Power Consumption | 100 mW |
| Rise Time | 8 µs |
| Output Power | 100 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Input Power (Max) | 100 mW |
| Fall Time | 8 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 4.44 mm |
| Size-Width | 2.54 mm |
| Size-Height | 5.08 mm |
| Lead Length | 12.7 mm |
| Operating Temperature | -40℃ ~ 100℃ |
The QSE113 from Fairchild is a NPN silicon infrared phototransistor encapsulated in black plastic sidelooker package.
● Daylight filter
● High sensitivity
● Blue dot marking on the top side
● Power dissipation of 100mW
● Operating temperature range from -40°C to 100°C
● Peak sensitivity of 880nm
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