TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 2 Pin |
Case/Package | SIDELOOKER DETECTOR |
Number of Channels | 1 Channel |
Number of Positions | 2 Position |
Wavelength | 880 nm |
Viewing Angle | 50° |
Peak Wavelength | 880 nm |
Power Dissipation | 0.1 W |
Power Consumption | 100 mW |
Rise Time | 8 µs |
Breakdown Voltage (Collector to Emitter) | 30 V |
Input Power (Max) | 100 mW |
Fall Time | 8 µs |
Fall Time (Max) | 8000 ns |
Fall Time (Max) | 8000 ns |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bag |
Material | Silicon |
Size-Length | 4.44 mm |
Size-Width | 2.54 mm |
Size-Height | 5.08 mm |
Operating Temperature | -40℃ ~ 100℃ (TA) |
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
●Features
●---
● |
● NPN silicon phototransistor
● Package type: sidelooker
● Medium wide reception angle, 50< °
● Package material and color: black epoxy
● Matched emitter: QEE113
● Daylight filter
● High sensitivity
ON Semiconductor
4 Pages / 0.16 MByte
ON Semiconductor
6 Pages / 0.29 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
1 Pages / 0.2 MByte
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