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R5009FNX
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R5009FNX Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Category:MOSFETs
Case Package:TO-220-3
Description:TO-220FM N 500V 9A 0.65Ω
Documentation:R5009FNX Datasheet (6 Pages)
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R5009FNX Datasheet PDF (6 Pages)
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R5009FNX Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Case/PackageTO-220-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)0.65 Ω
PolarityN
Power Dissipation50W (Tc)
Drain to Source Voltage (Vds)500 V
Continuous Drain Current (Ids)9A
Rise Time20 ns
Input Capacitance (Ciss)630pF @25V(Vds)
Fall Time40 ns
Power Dissipation (Max)50W (Tc)
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R5009FNX Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot For New Designs
PackagingBulk
Operating Temperature150℃ (TJ)
Minimum Packing Quantity1000
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R5009FNX Documents

R5009FNX Datasheet
ROHM Semiconductor
6 Pages / 0.64 MByte
R5009FNX Other Datasheet PDF
ROHM Semiconductor
14 Pages / 0.78 MByte

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