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R6004END3TL1
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R6004END3TL1 Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Case Package:TO-252
Description:Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) TO-252 T/R
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R6004END3TL1 Datasheet PDF
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R6004END3TL1 Specifications

TYPEDESCRIPTION
Number of Pins3 Pin
Case/PackageTO-252
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.9 Ω
Power Dissipation59 W
Threshold Voltage4 V
Drain to Source Voltage (Vds)600 V
Rise Time22 ns
Input Capacitance (Ciss)250pF @25V(Vds)
Fall Time40 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)59000 mW

R6004END3TL1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)

R6004END3TL1 Documents

R6004END3TL1 Other Datasheet PDF
ROHM Semiconductor
2.14 MByte

R6004END3 Documents

R6004END3TL1 Datasheet PDF
ROHM Semiconductor
Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) TO-252 T/R
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