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R6011END3TL1
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R6011END3TL1 Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Case Package:TO-252
Description:Nch 600V 11A POWER MOSFET
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R6011END3TL1 Datasheet PDF
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R6011END3TL1 Specifications

TYPEDESCRIPTION
Number of Pins3 Pin
Case/PackageTO-252
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.34 Ω
Power Dissipation124 W
Threshold Voltage4 V
Drain to Source Voltage (Vds)600 V
Rise Time40 ns
Input Capacitance (Ciss)670pF @25V(Vds)
Fall Time35 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)124000 mW

R6011END3TL1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)

R6011END3TL1 Documents

R6011END3TL1 Other Datasheet PDF
ROHM Semiconductor
2.35 MByte

R6011END3 Documents

R6011END3TL1 Datasheet PDF
ROHM Semiconductor
Nch 600V 11A POWER MOSFET
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