| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Dissipation | 100W (Tc) |
| Drain to Source Voltage (Vds) | 600 V |
| Input Capacitance (Ciss) | 1700pF @25V(Vds) |
| Power Dissipation (Max) | 100W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not For New Designs |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
Structure
●Silicon N-channel MOSFET
●Features
●1) Low on-resistance.
●2) Fast switching speed.
●3) Gate-source voltage (VGSS) guaranteed to be ±30V.
●4) Drive circuits can be simple.
●5) Parallel use is easy.
●Applications
●Switching
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