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R6020ENZ1C9
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R6020ENZ1C9 Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Category:High Voltage MOS
Case Package:TO-247-3
Description:TO-247 N-CH 600V 20A
Documentation:R6020ENZ1C9 Datasheet (13 Pages)
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R6020ENZ1C9 Datasheet PDF (13 Pages)
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R6020ENZ1C9 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Number of Channels1 Channel
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.17 Ω
PolarityN-Channel
Power Dissipation120 W
Threshold Voltage4 V
Drain to Source Voltage (Vds)600 V
Breakdown Voltage (Drain to Source)600 V
Continuous Drain Current (Ids)20A
Rise Time53 ns
Input Capacitance (Ciss)1400pF @25V(Vds)
Fall Time67 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)120W (Tc)
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R6020ENZ1C9 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended
PackagingBulk
Operating Temperature150℃ (TJ)
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R6020ENZ1C9 Documents

R6020ENZ1C9 Datasheet
ROHM Semiconductor
13 Pages / 0.88 MByte
R6020ENZ1C9 Other Datasheet PDF
ROHM Semiconductor
3 Pages / 0.12 MByte

R6020ENZ1 Documents

R6020ENZ1C9 Datasheet PDF
ROHM Semiconductor
TO-247 N-CH 600V 20A
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