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R6030KNZ1C9
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R6030KNZ1C9 Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Category:High Voltage MOS
Case Package:TO-247-3
Description:TO-247 N-CH 600V 30A
Documentation:R6030KNZ1C9 Datasheet (13 Pages)
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R6030KNZ1C9 Datasheet PDF (13 Pages)
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R6030KNZ1C9 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.115 Ω
PolarityN-Channel
Power Dissipation305 W
Threshold Voltage5 V
Drain to Source Voltage (Vds)600 V
Continuous Drain Current (Ids)30A
Rise Time75 ns
Input Capacitance (Ciss)2350pF @25V(Vds)
Fall Time45 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)305W (Tc)
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R6030KNZ1C9 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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R6030KNZ1C9 Documents

R6030KNZ1C9 Datasheet
ROHM Semiconductor
13 Pages / 2.03 MByte
R6030KNZ1C9 Other Datasheet PDF
ROHM Semiconductor
14 Pages / 2.03 MByte

R6030KNZ1 Documents

R6030KNZ1C9 Datasheet PDF
ROHM Semiconductor
TO-247 N-CH 600V 30A
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