| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 3.3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 36 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 2A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 210pF @25V(Vds) |
| Fall Time | 70 ns |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 35W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | 150℃ (TJ) |
| Minimum Packing Quantity | 1000 |
Structure
●Silicon N-channel MOSFET
●Features
●1) Low on-resistance.
●2) Low input capacitance.
●3) High ESD.
●Application
●Switching
ROHM Semiconductor
16 Pages / 0.84 MByte
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