TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 2 Pin |
Case/Package | SOD-882 |
Number of Positions | 2 Position |
Forward Voltage | 350mV @10mA |
Thermal Resistance | 70℃/W (RθJL) |
Forward Current | 100 mA |
Max Forward Surge Current (Ifsm) | 3 A |
Maximum Forward Voltage (Max) | 350 mV |
Forward Current (Max) | 100 mA |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Junction Temperature | 150℃ (Max) |
Power Dissipation (Max) | 565 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -65℃ ~ 150℃ |
The RB521CS30L is a planar maximum efficiency general application (MEGA) Schottky Barrier Rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small surface-mounted device (SMD) plastic package. It is used for low current rectification, high efficiency DC-to-DC conversion, switch mode power supply (SMPS), reverse polarity protection and low power consumption applications.
● <=10µA Low reverse current IR
● AEC-Q101 qualified
Nexperia
14 Pages / 0.25 MByte
Nexperia
RB521CS30L - 100 mA low V MEGA Schottky barrier rectifier DFN 2-Pin
LiteOn
Diode Schottky 30V 0.2A 2Pin SOD-882
NXP
0.1A, 30V, SILICON, SIGNAL DIODE, 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2
Micro Commercial Components
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon,
Leshan Radio
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
ROHM Semiconductor
Diode Schottky 30V 0.1A 2Pin VMN T/R
Nexperia
DIODE SCHOTTKY 30V 100mA SOD882
ROHM Semiconductor
Diode Small Signal Schottky 30V 0.1A 2Pin VMN T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.