| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 200 mA |
| Case/Package | SOD-523 |
| Output Current | ≤200 mA |
| Load Current | 0.2 A |
| Number of Positions | 2 Position |
| Forward Voltage | 500mV @200mA |
| Polarity | Standard |
| Power Dissipation | 200 mW |
| Thermal Resistance | 635℃/W (RθJA) |
| Reverse recovery time | 6 ns |
| Forward Current | 200 mA |
| Max Forward Surge Current (Ifsm) | 1 A |
| Maximum Forward Voltage (Max) | 500 mV |
| Forward Current (Max) | 200 mA |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.3 mm |
| Size-Width | 0.9 mm |
| Size-Height | 0.7 mm |
| Operating Temperature | -55℃ ~ 125℃ |
The RB521S30T1G is a Schottky Barrier Diode designed for high speed switching applications, circuit protection and voltage clamping. It features extremely low forward voltage reduces conduction loss. This miniature surface mount package is excellent for hand held and portable applications, where space is limited.
● Extremely fast switching speed
● 0.5V at IF = 200mA Extremely low forward voltage (maximum)
● Low reverse current
● AEC-Q101 qualified and PPAP capable
● Pb-free, halogen free/BFR free
ON Semiconductor
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11 Pages / 0.1 MByte
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ON Semiconductor
Diode Schottky 30V 0.2A 2Pin SOD-523 T/R
Won-Top Electronics
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
Leshan Radio
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, SC-79, 2 PIN
ON Semiconductor
ON SEMICONDUCTOR RB521S30T1G Small Signal Schottky Diode, Single, 30V, 200mA, 500mV, 1A, 125℃
Leshan Radio
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, SC-79, 2 PIN
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