| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 30.0 mA |
| Capacitance | 2.50 pF |
| Case/Package | SOD-323 |
| Output Current | ≤30.0 mA |
| Number of Positions | 2 Position |
| Forward Voltage | 370mV @1mA |
| Polarity | Standard |
| Power Dissipation | 200 kW |
| Thermal Resistance | 635℃/W (RθJA) |
| Reverse recovery time | 6 ns |
| Max Breakdown Voltage | 30 V |
| Forward Current | 30 mA |
| Max Forward Surge Current (Ifsm) | 500 mA |
| Maximum Forward Voltage (Max) | 370 mV |
| Forward Current (Max) | 30 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.7 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The RB751V40T1G is a Schottky Barrier Diode designed for high speed switching applications, circuit protection and voltage clamping. It features extremely low forward voltage reduces conduction loss. This miniature surface mount package is excellent for hand held and portable applications, where space is limited.
● Extremely fast switching speed
● 0.28V at IF = 1mADC Extremely low forward voltage (typ.)
● Low reverse current
● AEC-Q101 qualified and PPAP capable
● Pb-free, halogen free/BFR free
ON Semiconductor
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36 Pages / 0.15 MByte
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Diode Schottky 40V 0.03A 2Pin SOD-323 T/R
Won-Top Electronics
Rectifier Diode, Schottky, 1 Element, 0.03A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2
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Rectifier Diode, Schottky, 1 Element, 0.03A, 40V V(RRM), Silicon, SC-76, 2 PIN
ON Semiconductor
ON SEMICONDUCTOR RB751V40T1G Small Signal Schottky Diode, Single, 30V, 30mA, 370mV, 500mA, 150℃
Leshan Radio
Rectifier Diode, Schottky, 1 Element, 0.03A, 40V V(RRM), Silicon, SC-76, 2 PIN
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