RD3P050SNTL1 Datasheet PDF - ROHM Semiconductor

Manufacturer:	ROHM Semiconductor
Case Package:	TO-252
Description:	Power Field-Effect Transistor,
Documentation:	RD3P050SNTL1 Datasheet (16 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

RD3P050SNTL1 Specifications

TYPE	DESCRIPTION
Number of Pins	3 Pin
Case/Package	TO-252
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.135 Ω
Power Dissipation	15 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	100 V
Rise Time	15 ns
Input Capacitance (Ciss)	530pF @25V(Vds)
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	15000 mW