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RF4E080BNTR
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RF4E080BNTR Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Category:MOSFETs
Case Package:PowerUDFN-8
Description:Trans MOSFET N-CH 30V 8A 8Pin HUML EP T/R
Documentation:RF4E080BNTR Datasheet (13 Pages)
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RF4E080BNTR Datasheet PDF (13 Pages)
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RF4E080BNTR Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackagePowerUDFN-8
Power Dissipation2 W
Drain to Source Voltage (Vds)30 V
Rise Time100 ns
Input Capacitance (Ciss)660pF @15V(Vds)
Input Power (Max)2 W
Fall Time7 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)2W (Ta)
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RF4E080BNTR Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature150℃ (TJ)
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RF4E080BNTR Documents

RF4E080BNTR Datasheet
ROHM Semiconductor
13 Pages / 2.39 MByte
RF4E080BNTR Other Datasheet PDF
ROHM Semiconductor
13 Pages / 2.41 MByte

RF4E080 Documents

RF4E080BNTR Datasheet PDF
ROHM Semiconductor
Trans MOSFET N-CH 30V 8A 8Pin HUML EP T/R
RF4E080GNTR Datasheet PDF
ROHM Semiconductor
MOSFET N-CH 30V 8A 8-HUML
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