| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 800MHz ~ 950MHz |
| Number of Pins | 16 Pin |
| Case/Package | QFN-16 |
| Supply Current | 2.00 A |
| Number of Positions | 16 Position |
| Gain | 32 dB |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage (Max) | 3 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Each |
The RF5110G is a high-power high-gain high-efficiency Power Amplifier. The device is manufactured on an advanced GaAs HBT process and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900MHz band and general purpose radio applications in standard sub-bands from 150 to 960MHz. On-board power control provides over 70dB of control range with an analogue voltage input and allows for power down with a logic "low" in standby operation. The device is self-contained with 50R input and the output can be easily matched to obtain optimum power and efficiency characteristics.
● General purpose - 32dBm output power, 53% efficiency
● GSM - 32dB gain with analogue gain control, 57% efficiency
●ESD sensitive device, take proper precaution while handling the device.
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