| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Power Dissipation | 48 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 50 V |
| Rise Time | 24 ns |
| Input Capacitance (Ciss) | 670pF @25V(Vds) |
| Input Power (Max) | 48 W |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 48 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
The RFD14N05LSM is a N-channel logic level Power MOSFET produced using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
● Temperature compensating PSPICE® model
● Can be driven directly from CMOS, NMOS and TTL circuits
● Peak current vs pulse width curve
● UIS rating curve
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