| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 14.0 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 48 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 50 V |
| Breakdown Voltage (Drain to Source) | 50.0 V |
| Continuous Drain Current (Ids) | 14.0 mA |
| Rise Time | 26 ns |
| Input Capacitance (Ciss) | 570pF @25V(Vds) |
| Input Power (Max) | 48 W |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 48 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The RFD14N05SM9A is a N-channel Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770.
● Temperature compensating PSPICE® model
● Peak current vs. pulse width curve
● UIS Rating curve
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