directly from logic circuit supply voltages. 5V range, thereby facilitating true on-off power control provides full rated conductance at gate biases in the 3V to accomplished through a special gate oxide design which switches for bipolar transistors. This performance is
●switching converters, motor relay drivers and emitter such as programmable controllers, switching regulators, These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI
●integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications
●Features
●• 16A, 50V
●•rDS(ON)= 0.047Ω
●• UIS SOA Rating Curve (Single Pulse)
●• Design Optimized for 5V Gate Drives
●• Can be Driven Directly from CMOS, NMOS, TTL Circuits
●• SOA is Power Dissipation Limited
●• Nanosecond Switching Speeds
●• Linear Transfer Characteristics
●• High Input Impedance
●• Majority Carrier Device
●• Related Literature
●\- TB334 “Guidelines for Soldering Surface Mount
●Components to PC Boards”
