TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | TO-251-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 107 mΩ |
Power Dissipation | 38 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 60 V |
Rise Time | 105 ns |
Input Capacitance (Ciss) | 350pF @25V(Vds) |
Input Power (Max) | 38 W |
Fall Time | 39 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 38000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Material | Silicon |
The RFD3055LE is a N-channel enhancement-mode Power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. It can be operated directly from integrated circuits.
● Temperature compensating PSPICE® model
● Peak current vs. pulse width curve
● UIS Rating curve
ON Semiconductor
8 Pages / 1.33 MByte
ON Semiconductor
9 Pages / 1.15 MByte
ON Semiconductor
2 Pages / 0.55 MByte
Fairchild
MOSFET Power MOSFET N-Ch 60V/12A/0.15Ω
Harris
12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)
Intersil
12A/ 60V/ 0.15Ω/ N-Channel Power MOSFETs
Fairchild
Trans MOSFET N-CH 60V 11A 3Pin(2+Tab) DPAK T/R
Fairchild
N-Channel 60V 0.107Ω Through Hole Logic Level Power Mosfet - TO-251AA
ON Semiconductor
Trans MOSFET N-CH Si 60V 11A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH Si 60V 11A 3Pin(2+Tab) DPAK Rail
ON Semiconductor
Trans MOSFET N-CH Si 60V 11A 3Pin(3+Tab) IPAK Rail
Fairchild
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) TO-252AA
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.