| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.107 Ω |
| Power Dissipation | 38 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 105 ns |
| Input Capacitance (Ciss) | 350pF @25V(Vds) |
| Input Power (Max) | 38 W |
| Fall Time | 39 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 38 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The RFD3055LESM9A is a N-channel enhancement-mode Power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. It can be operated directly from integrated circuits.
● Temperature compensating PSPICE® model
● Peak current vs. pulse width curve
● UIS Rating curve
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