| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 12.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 60 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 200 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±10.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 70 ns |
| Input Capacitance (Ciss) | 900pF @25V(Vds) |
| Input Power (Max) | 60 W |
| Fall Time | 80 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3 to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. This product is general usage and suitable for many different applications.
● Compatible with automotive drive requirements
● Can be driven directly from QMOS, NMOS and TTL circuits
● High input impedance
● Nanosecond switching speed
● Linear transfer characteristics
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