Description
●The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switch ing regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from inte grated circuits.
●Features
●• 30A, 60V
●• rDS(ON) = 0.047Ω
●• 2kV ESD Protected
●• Temperature Compensating PSPICE Model
●• Peak Current vs Pulse Width Curve
●• UIS Rating Curve
Harris
6 Pages / 0.08 MByte
Fairchild
Trans MOSFET N-CH Si 60V 30A 3Pin(3+Tab) TO-220AB Rail
Intersil
30A, 60V, ESD Rated, 0.047Ω, Logic Level N-Channel Power MOSFETs
ON Semiconductor
MOSFET N-CH 60V 30A TO-220AB
Fairchild
MOSFET TO-220AB N-Ch Power
Harris
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Freescale
MOSFET N-CH 60V 30A TO-220AB
Harris
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Fairchild
30A, 60V, ESD Rated, 0.047Ω, Logic Level N-Channel Power MOSFETs
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