| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 50.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 131 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 22 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 131 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Continuous Drain Current (Ids) | 50.0 A |
| Rise Time | 55 ns |
| Input Capacitance (Ciss) | 2020pF @25V(Vds) |
| Input Power (Max) | 131 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 131 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for applications such as switching regulators, switching converters, motor drivers and relay drivers. This transistor can be operated directly from integrated circuits. This product is general usage and suitable for many different applications.
● Temperature compensating PSPICE® model
● Peak current vs. pulse width curve
● UIS Rated curve
● 175°C Rated junction temperature
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