RGC80TSX8RGC11 Datasheet PDF - ROHM Semiconductor

Manufacturer:	ROHM Semiconductor
Case Package:	TO-247-3
Description:	IGBT
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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RGC80TSX8RGC11 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	535 W
Breakdown Voltage (Collector to Emitter)	1800 V
Input Power (Max)	535 W
Operating Temperature (Max)	175 ℃

TYPE	DESCRIPTION
Product Lifecycle Status	Active
Operating Temperature	-40℃ ~ 175℃ (TJ)

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