| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-247-2 |
| Forward Voltage | 2.1 V |
| Thermal Resistance | 1℃/W (RθJC) |
| Reverse recovery time | 50 ns |
| Forward Current | 50000 mA |
| Max Forward Surge Current (Ifsm) | 500 A |
| Maximum Forward Voltage (Max) | 2.1 V |
| Forward Current (Max) | 50 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 15.8 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.8 mm |
| Operating Temperature | -65℃ ~ 175℃ |
The RHRG5060 is a Hyperfast Diode offers soft recovery characteristics. It has the half recovery time of Ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. It is intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Its low-stored charge and Hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
● 50ns at IF=50A Hyperfast recovery
● High reliability
● Avalanche energy rated
ON Semiconductor
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