| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-247-2 |
| Number of Positions | 2 Position |
| Forward Voltage | 3.2 V |
| Thermal Resistance | 0.8℃/W (RθJC) |
| Reverse recovery time | 100 ns |
| Forward Current | 75 A |
| Max Forward Surge Current (Ifsm) | 500 A |
| Maximum Forward Voltage (Max) | 3.2 V |
| Forward Current (Max) | 75 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 190000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 15.8 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.8 mm |
| Operating Temperature | -65℃ ~ 175℃ |
The RHRG75120 is a Hyperfast Diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
ON Semiconductor
6 Pages / 0.31 MByte
ON Semiconductor
7 Pages / 1.09 MByte
ON Semiconductor
1 Pages / 0.09 MByte
ON Semiconductor
18 Pages / 3.05 MByte
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