| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-220-2 |
| Forward Voltage | 2.1 V |
| Thermal Resistance | 2℃/W (RθJC) |
| Reverse recovery time | 35 ns |
| Forward Current | 8000 mA |
| Max Forward Surge Current (Ifsm) | 100 A |
| Maximum Forward Voltage (Max) | 2.1 V |
| Forward Current (Max) | 8 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not For New Designs |
| Packaging | Rail, Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.65 mm |
| Operating Temperature | -65℃ ~ 175℃ |
The RHRP860 is a Hyperfast Diode with soft recovery characteristics. They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
● 600VDC Blocking voltage
● 75W Maximum power dissipation
● 2°C/W Junction to case thermal resistance
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