RJH60F5BDPQ-A0#T0 Datasheet PDF - Renesas Electronics

This RJH60F5BDPQ-A0#T0 IGBT transistor from Renesas is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 260400 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single dual collector configuration.