| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 2.50 A |
| Case/Package | SOT-89-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 165 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 500 mW |
| Threshold Voltage | 4.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Continuous Drain Current (Ids) | 2.50 A |
| Rise Time | 18 ns |
| Input Capacitance (Ciss) | 160pF @10V(Vds) |
| Input Power (Max) | 500 mW |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 500mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Width | 2.5 mm |
| Operating Temperature | 150℃ (TJ) |
The RJP020N06T100 is a N-channel silicon MOSFET offers 60V drain source voltage and ±2A continuous drain current. It is suitable for use in switching applications.
● Low ON-resistance
● 2.5V Low voltage drive
ROHM Semiconductor
5 Pages / 0.87 MByte
ROHM Semiconductor
3 Pages / 0.05 MByte
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1 Pages / 0.16 MByte
ROHM Semiconductor
MPT3/SOT-89 N 60V 2A 0.21Ω
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