| TYPE | DESCRIPTION |
|---|
| Case/Package | SM-6 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) • Including two devices in SM6 (super-mini-type with six (6) leads) • With built-in bias resistors • Simplified circuit design • Reduced number of parts and manufacturing process • Complementary to RN2601 to RN2606 APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Toshiba
7 Pages / 0.46 MByte
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